Triboluminescence of ZnS:Mn films deposited on quartz substrates with ZnO buffer layers

Boateng Onwona-Agyeman; Chao Nan Xu; Wensheng Shi; Morio Suzuki; Xu Guang Zheng

doi:10.1143/jjap.41.5259

Triboluminescence of ZnS:Mn films deposited on quartz substrates with ZnO buffer layers

Boateng Onwona-Agyeman, Chao Nan Xu, Wensheng Shi, Morio Suzuki, Xu Guang Zheng

Research output: Contribution to journal › Article › peer-review

16 Citations (Scopus)

Abstract

We have investigated the effect of ZnO films used as buffer layers on the triboluminescence (TrL) intensity of ZnS:Mn thin films on quartz substrates using the RF magnetron sputtering method and annealing technique. Highly oriented ZnO film was first deposited on quartz glass substrate and then the ZnS:Mn film was successfully deposited on the highly oriented ZnO film. By annealing at 5% H₂ in Ar ambient, the crystallinity of both ZnO and ZnS:Mn films was improved. It was found that the addition of the ZnO buffer layer greatly improves the TrL intensity of the ZnS:Mn films.

Original language	English
Pages (from-to)	5259-5261
Number of pages	3
Journal	Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
Volume	41
Issue number	8
DOIs	https://doi.org/10.1143/jjap.41.5259
Publication status	Published - Aug 2002
Externally published	Yes

Keywords

Annealing
Crystallinity
Triboluminescence
ZnO
ZnS:Mn

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10.1143/jjap.41.5259

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title = "Triboluminescence of ZnS:Mn films deposited on quartz substrates with ZnO buffer layers",

abstract = "We have investigated the effect of ZnO films used as buffer layers on the triboluminescence (TrL) intensity of ZnS:Mn thin films on quartz substrates using the RF magnetron sputtering method and annealing technique. Highly oriented ZnO film was first deposited on quartz glass substrate and then the ZnS:Mn film was successfully deposited on the highly oriented ZnO film. By annealing at 5\% H2 in Ar ambient, the crystallinity of both ZnO and ZnS:Mn films was improved. It was found that the addition of the ZnO buffer layer greatly improves the TrL intensity of the ZnS:Mn films.",

keywords = "Annealing, Crystallinity, Triboluminescence, ZnO, ZnS:Mn",

author = "Boateng Onwona-Agyeman and Xu, \{Chao Nan\} and Wensheng Shi and Morio Suzuki and Zheng, \{Xu Guang\}",

year = "2002",

month = aug,

doi = "10.1143/jjap.41.5259",

language = "English",

volume = "41",

pages = "5259--5261",

journal = "Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers",

issn = "0021-4922",

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T1 - Triboluminescence of ZnS:Mn films deposited on quartz substrates with ZnO buffer layers

AU - Onwona-Agyeman, Boateng

AU - Xu, Chao Nan

AU - Shi, Wensheng

AU - Suzuki, Morio

AU - Zheng, Xu Guang

PY - 2002/8

Y1 - 2002/8

N2 - We have investigated the effect of ZnO films used as buffer layers on the triboluminescence (TrL) intensity of ZnS:Mn thin films on quartz substrates using the RF magnetron sputtering method and annealing technique. Highly oriented ZnO film was first deposited on quartz glass substrate and then the ZnS:Mn film was successfully deposited on the highly oriented ZnO film. By annealing at 5% H2 in Ar ambient, the crystallinity of both ZnO and ZnS:Mn films was improved. It was found that the addition of the ZnO buffer layer greatly improves the TrL intensity of the ZnS:Mn films.

AB - We have investigated the effect of ZnO films used as buffer layers on the triboluminescence (TrL) intensity of ZnS:Mn thin films on quartz substrates using the RF magnetron sputtering method and annealing technique. Highly oriented ZnO film was first deposited on quartz glass substrate and then the ZnS:Mn film was successfully deposited on the highly oriented ZnO film. By annealing at 5% H2 in Ar ambient, the crystallinity of both ZnO and ZnS:Mn films was improved. It was found that the addition of the ZnO buffer layer greatly improves the TrL intensity of the ZnS:Mn films.

KW - Annealing

KW - Crystallinity

KW - Triboluminescence

KW - ZnO

KW - ZnS:Mn

UR - https://www.scopus.com/pages/publications/0036698516

U2 - 10.1143/jjap.41.5259

DO - 10.1143/jjap.41.5259

M3 - Article

AN - SCOPUS:0036698516

SN - 0021-4922

VL - 41

SP - 5259

EP - 5261

JO - Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

JF - Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

IS - 8

ER -

Triboluminescence of ZnS:Mn films deposited on quartz substrates with ZnO buffer layers

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Keywords

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