Triboluminescence of ZnS:Mn films deposited on quartz substrates with ZnO buffer layers

Boateng Onwona-Agyeman, Chao Nan Xu, Wensheng Shi, Morio Suzuki, Xu Guang Zheng

Research output: Contribution to journalArticlepeer-review

13 Citations (Scopus)

Abstract

We have investigated the effect of ZnO films used as buffer layers on the triboluminescence (TrL) intensity of ZnS:Mn thin films on quartz substrates using the RF magnetron sputtering method and annealing technique. Highly oriented ZnO film was first deposited on quartz glass substrate and then the ZnS:Mn film was successfully deposited on the highly oriented ZnO film. By annealing at 5% H2 in Ar ambient, the crystallinity of both ZnO and ZnS:Mn films was improved. It was found that the addition of the ZnO buffer layer greatly improves the TrL intensity of the ZnS:Mn films.

Original languageEnglish
Pages (from-to)5259-5261
Number of pages3
JournalJapanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
Volume41
Issue number8
DOIs
Publication statusPublished - Aug 2002
Externally publishedYes

Keywords

  • Annealing
  • Crystallinity
  • Triboluminescence
  • ZnO
  • ZnS:Mn

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