Abstract
We have investigated the effect of ZnO films used as buffer layers on the triboluminescence (TrL) intensity of ZnS:Mn thin films on quartz substrates using the RF magnetron sputtering method and annealing technique. Highly oriented ZnO film was first deposited on quartz glass substrate and then the ZnS:Mn film was successfully deposited on the highly oriented ZnO film. By annealing at 5% H2 in Ar ambient, the crystallinity of both ZnO and ZnS:Mn films was improved. It was found that the addition of the ZnO buffer layer greatly improves the TrL intensity of the ZnS:Mn films.
Original language | English |
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Pages (from-to) | 5259-5261 |
Number of pages | 3 |
Journal | Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers |
Volume | 41 |
Issue number | 8 |
DOIs | |
Publication status | Published - Aug 2002 |
Externally published | Yes |
Keywords
- Annealing
- Crystallinity
- Triboluminescence
- ZnO
- ZnS:Mn