Thermal annealing effects on the triboluminescence intensity of sputtered ZnS:Mn thin films

O. Agyeman; C. N. Xu; I. Usui; X. G. Zheng; M. Suzuki

Thermal annealing effects on the triboluminescence intensity of sputtered ZnS:Mn thin films

O. Agyeman, C. N. Xu, I. Usui, X. G. Zheng, M. Suzuki

Kyushu Natl. Indust. Res. Institute

Research output: Contribution to journal › Conference article › peer-review

4 Citations (Scopus)

Abstract

We have investigated the triboluminescence (TrL) intensities of as-grown and thermally annealed ZnS thin films doped with manganese on quartz substrates. The ZnS:Mn thin films were deposited by rf magnetron sputtering and thermally annealed in a reducing gas (5% H₂/Ar) at 500°C, 600°C, 700°C and 800°C. The crystallinity and the triboluminescence intensities of the films were greatly enhanced by postannealing up to 700°C, accompanied by an increase in the adherent strength of the film. An X-ray diffractometer and a Scratch Adhesion Tester were used to study the crystallinity and adhesion of the as-grown and annealed films respectively. Results based on crystallographic and acoustic emission data were used to explain the failure mechanisms in the films during the triboluminescence measurement.

Original language	English
Pages (from-to)	350-354
Number of pages	5
Journal	Proceedings of SPIE - The International Society for Optical Engineering
Volume	4220
Publication status	Published - 2000
Externally published	Yes
Event	Advanced Photonic Sensors: Technology and Applications - Beijing, China Duration: 8 Nov 2000 → 10 Nov 2000

Cite this

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title = "Thermal annealing effects on the triboluminescence intensity of sputtered ZnS:Mn thin films",

abstract = "We have investigated the triboluminescence (TrL) intensities of as-grown and thermally annealed ZnS thin films doped with manganese on quartz substrates. The ZnS:Mn thin films were deposited by rf magnetron sputtering and thermally annealed in a reducing gas (5% H2/Ar) at 500°C, 600°C, 700°C and 800°C. The crystallinity and the triboluminescence intensities of the films were greatly enhanced by postannealing up to 700°C, accompanied by an increase in the adherent strength of the film. An X-ray diffractometer and a Scratch Adhesion Tester were used to study the crystallinity and adhesion of the as-grown and annealed films respectively. Results based on crystallographic and acoustic emission data were used to explain the failure mechanisms in the films during the triboluminescence measurement.",

author = "O. Agyeman and Xu, {C. N.} and I. Usui and Zheng, {X. G.} and M. Suzuki",

year = "2000",

language = "English",

volume = "4220",

pages = "350--354",

journal = "Proceedings of SPIE - The International Society for Optical Engineering",

issn = "0277-786X",

publisher = "SPIE",

note = "Advanced Photonic Sensors: Technology and Applications ; Conference date: 08-11-2000 Through 10-11-2000",

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TY - JOUR

T1 - Thermal annealing effects on the triboluminescence intensity of sputtered ZnS:Mn thin films

AU - Agyeman, O.

AU - Xu, C. N.

AU - Usui, I.

AU - Zheng, X. G.

AU - Suzuki, M.

PY - 2000

Y1 - 2000

N2 - We have investigated the triboluminescence (TrL) intensities of as-grown and thermally annealed ZnS thin films doped with manganese on quartz substrates. The ZnS:Mn thin films were deposited by rf magnetron sputtering and thermally annealed in a reducing gas (5% H2/Ar) at 500°C, 600°C, 700°C and 800°C. The crystallinity and the triboluminescence intensities of the films were greatly enhanced by postannealing up to 700°C, accompanied by an increase in the adherent strength of the film. An X-ray diffractometer and a Scratch Adhesion Tester were used to study the crystallinity and adhesion of the as-grown and annealed films respectively. Results based on crystallographic and acoustic emission data were used to explain the failure mechanisms in the films during the triboluminescence measurement.

AB - We have investigated the triboluminescence (TrL) intensities of as-grown and thermally annealed ZnS thin films doped with manganese on quartz substrates. The ZnS:Mn thin films were deposited by rf magnetron sputtering and thermally annealed in a reducing gas (5% H2/Ar) at 500°C, 600°C, 700°C and 800°C. The crystallinity and the triboluminescence intensities of the films were greatly enhanced by postannealing up to 700°C, accompanied by an increase in the adherent strength of the film. An X-ray diffractometer and a Scratch Adhesion Tester were used to study the crystallinity and adhesion of the as-grown and annealed films respectively. Results based on crystallographic and acoustic emission data were used to explain the failure mechanisms in the films during the triboluminescence measurement.

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M3 - Conference article

AN - SCOPUS:0034459409

SN - 0277-786X

VL - 4220

SP - 350

EP - 354

JO - Proceedings of SPIE - The International Society for Optical Engineering

JF - Proceedings of SPIE - The International Society for Optical Engineering

T2 - Advanced Photonic Sensors: Technology and Applications

Y2 - 8 November 2000 through 10 November 2000

ER -

Thermal annealing effects on the triboluminescence intensity of sputtered ZnS:Mn thin films

Abstract

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