@inproceedings{aca64d5812e14a1197c69fe27601ec33,
title = "Subthreshold characteristics of p-type triple-gate MOSFETs",
abstract = "The fabrication and characterization of triple-gate p-type metal-oxide semiconductor field effect transistors (p-MOSFETs) on SOI material with multiple channels is described. To demonstrate the beneficial effects of the triple-gate structure on scaling, the output and transfer characteristics of 70 nm printed gate length pMOSFETs with 22 nm MESA width are presented. The geometrical influence of triple-gate MESA width on subthreshold behavior is investigated in short- and long channel devices. The temperature dependence of subthreshold characteristics is discussed.",
author = "M. Lemme and T. Mollenhauer and W. Henschel and T. Wahlbrink and H. Gottlob and J. Efavi and M. Baus and O. Winkler and B. Spangenberg and H. Kurz",
note = "Publisher Copyright: {\textcopyright} 2003 IEEE.; 33rd European Solid-State Device Research Conference, ESSDERC 2003 ; Conference date: 16-09-2003 Through 18-09-2003",
year = "2003",
doi = "10.1109/ESSDERC.2003.1256826",
language = "English",
isbn = "9780780379992",
series = "European Solid-State Device Research Conference",
publisher = "IEEE Computer Society",
pages = "123--126",
editor = "Jose Franca and Paulo Freitas",
booktitle = "ESSDERC 2003 - Proceedings of the 33rd European Solid-State Device Research Conference",
}