Subthreshold characteristics of p-type triple-gate MOSFETs

M. Lemme, T. Mollenhauer, W. Henschel, T. Wahlbrink, H. Gottlob, J. Efavi, M. Baus, O. Winkler, B. Spangenberg, H. Kurz

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

14 Citations (Scopus)

Abstract

The fabrication and characterization of triple-gate p-type metal-oxide semiconductor field effect transistors (p-MOSFETs) on SOI material with multiple channels is described. To demonstrate the beneficial effects of the triple-gate structure on scaling, the output and transfer characteristics of 70 nm printed gate length pMOSFETs with 22 nm MESA width are presented. The geometrical influence of triple-gate MESA width on subthreshold behavior is investigated in short- and long channel devices. The temperature dependence of subthreshold characteristics is discussed.

Original languageEnglish
Title of host publicationESSDERC 2003 - Proceedings of the 33rd European Solid-State Device Research Conference
EditorsJose Franca, Paulo Freitas
PublisherIEEE Computer Society
Pages123-126
Number of pages4
ISBN (Electronic)0780379993
ISBN (Print)9780780379992
DOIs
Publication statusPublished - 2003
Externally publishedYes
Event33rd European Solid-State Device Research Conference, ESSDERC 2003 - Estoril
Duration: 16 Sep 200318 Sep 2003

Publication series

NameEuropean Solid-State Device Research Conference
ISSN (Print)1930-8876

Conference

Conference33rd European Solid-State Device Research Conference, ESSDERC 2003
Country/TerritoryPortugal
CityEstoril
Period16/09/0318/09/03

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