Abstract
Undoped ZnO thin films were grown by rf magnetron sputtering on quartz-glass substrates and thermally annealed under various conditions such as in vacuum, reducing gas (5% H2 diluted in Ar), oxygen and argon ambient, up to 1100°C. We observed a strong excitonic (UV) emission peak around 3.26 eV, when the films were annealed in the reducing ambient whilst the films annealed in argon and oxygen showed strong deep-level emission peaks. The dependence of the UV and visible emissions on the film crystallinity and annealing is discussed.
| Original language | English |
|---|---|
| Pages (from-to) | 666-669 |
| Number of pages | 4 |
| Journal | Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers |
| Volume | 41 |
| Issue number | 2 A |
| DOIs | |
| Publication status | Published - Feb 2002 |
| Externally published | Yes |
Keywords
- Annealing
- Crystallinity
- Photoluminescence
- Thin film
- Ultraviolet
- ZnO