Settling of inclusions in top-cut solar grade silicon (SOG-SI) under electromagnetic field

Increasing demand for Solar Grade Silicon (SoG-Si) due to rising interest in renewable energy has lead to increased SoG-Si Top - cut scraps generated from the multi-crystalline silicon making process. Due to the high cost of SoG-Si and the potential to use the top-cut scraps as feedstock material, there has been increased effort to develop cost effective and efficient technologies. As a result, several methods to recycle the top-cut scraps are currently been applied, and researched. These include settling under gravitation field, which is a slow process to be industrially applicable. Natural settling of inclusions by gravitational force is a slow process and not attractive to the industry. Recent experiments on Top-cut SoG-Si scrap under high frequency, high voltage, electromagnetic field showed that SiC inclusions settled within a short time to the bottom of the crucible and the characteristic rod-like morphologies of Si ₃N ₄ inclusions in SoG-Si were not detected. This study investigates the enhanced settling of SiC inclusions and the behavior of Si ₃N ₄ particles under the influence of high frequency, high voltage, electromagnetic field in Top-cut SoG-Si.