TY - GEN
T1 - Settling of inclusions in top-cut solar grade silicon (SOG-SI) under electromagnetic field
AU - Damoah, Lucas Nana Wiredu
AU - Zhang, Lifeng
PY - 2012
Y1 - 2012
N2 - Increasing demand for Solar Grade Silicon (SoG-Si) due to rising interest in renewable energy has lead to increased SoG-Si Top - cut scraps generated from the multi-crystalline silicon making process. Due to the high cost of SoG-Si and the potential to use the top-cut scraps as feedstock material, there has been increased effort to develop cost effective and efficient technologies. As a result, several methods to recycle the top-cut scraps are currently been applied, and researched. These include settling under gravitation field, which is a slow process to be industrially applicable. Natural settling of inclusions by gravitational force is a slow process and not attractive to the industry. Recent experiments on Top-cut SoG-Si scrap under high frequency, high voltage, electromagnetic field showed that SiC inclusions settled within a short time to the bottom of the crucible and the characteristic rod-like morphologies of Si 3N 4 inclusions in SoG-Si were not detected. This study investigates the enhanced settling of SiC inclusions and the behavior of Si 3N 4 particles under the influence of high frequency, high voltage, electromagnetic field in Top-cut SoG-Si.
AB - Increasing demand for Solar Grade Silicon (SoG-Si) due to rising interest in renewable energy has lead to increased SoG-Si Top - cut scraps generated from the multi-crystalline silicon making process. Due to the high cost of SoG-Si and the potential to use the top-cut scraps as feedstock material, there has been increased effort to develop cost effective and efficient technologies. As a result, several methods to recycle the top-cut scraps are currently been applied, and researched. These include settling under gravitation field, which is a slow process to be industrially applicable. Natural settling of inclusions by gravitational force is a slow process and not attractive to the industry. Recent experiments on Top-cut SoG-Si scrap under high frequency, high voltage, electromagnetic field showed that SiC inclusions settled within a short time to the bottom of the crucible and the characteristic rod-like morphologies of Si 3N 4 inclusions in SoG-Si were not detected. This study investigates the enhanced settling of SiC inclusions and the behavior of Si 3N 4 particles under the influence of high frequency, high voltage, electromagnetic field in Top-cut SoG-Si.
KW - Electromagnetic
KW - Inclusions
KW - Settling
KW - Silicon
UR - http://www.scopus.com/inward/record.url?scp=84860793109&partnerID=8YFLogxK
M3 - Conference contribution
AN - SCOPUS:84860793109
SN - 9781118291412
T3 - TMS Annual Meeting
SP - 271
EP - 278
BT - 3rd International Symposium on High-Temperature Metallurgical Processing - Held During the TMS 2012 Annual Meeting and Exhibition
T2 - 3rd International Symposium on High-Temperature Metallurgical Processing - TMS 2012 Annual Meeting and Exhibition
Y2 - 11 March 2012 through 15 March 2012
ER -