Abstract
Undoped ZnO thin films were grown by rf magnetron sputtering on quartz-glass substrates and thermally annealed in various conditions such as in vacuum, reducing gas (5 % H2 diluted in Ar), oxygen and argon ambient, up to 1100 °C. We have observed a strong excitonic (UV) emission peak around 3.26 eV, when the films were annealed in the reducing ambient whilst the films annealed in argon and oxygen showed strong deeplevel emission peaks. We have found that the UV / visible emission ratio increased with the increase of the crystallinity of the ZnO films.
Original language | English |
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Pages (from-to) | 107-112 |
Number of pages | 6 |
Journal | Key Engineering Materials |
Volume | 228-229 |
Publication status | Published - 2002 |
Externally published | Yes |
Event | Asian Ceramic Science for Electronics II Proceedings of the 2nd Asian Meeting of Electroceramics - Kawasaki Duration: 1 Oct 2001 → 1 Oct 2001 |
Keywords
- Annealing Effect
- Crystallinity
- Photoluminescence
- Sputtering
- ZnO