Processing and evaluation of metal gate/high-κ/Si capacitors incorporating Al, Ni, TiN, and Mo as metal gate, and ZrO2 and HfO2 as high-κ dielectric

  • S. Abermann
  • , J. K. Efavi
  • , G. Sjoblom
  • , M. C. Lemme
  • , J. Olsson
  • , E. Bertagnolli

Research output: Contribution to journal › Article › peer-review

8 Citations (Scopus)

Fingerprint

Dive into the research topics of 'Processing and evaluation of metal gate/high-κ/Si capacitors incorporating Al, Ni, TiN, and Mo as metal gate, and ZrO2 and HfO2 as high-κ dielectric'. Together they form a unique fingerprint.

Material Science