Nickel-silicide process for ultra-thin-body SOI-MOSFETs

M. Schmidt, T. Mollenhauer, H. D.B. Gottlob, T. Wahlbrink, J. K. Efavi, L. Ottaviano, S. Cristoloveanu, M. C. Lemme, H. Kurz

Research output: Contribution to journalArticlepeer-review

10 Citations (Scopus)

Abstract

A self-aligned nickel-silicide process to reduce parasitic source and drain resistances in ultra-thin-body silicon-on-insulator (UTB-SOI)-MOSFETs is investigated. An optimized nickel-silicide process sequence including nickel sputter deposition, rapid thermal diffusion and compatible silicon nitride (Si3N4) spacers is demonstrated in UTB-SOI n-MOSFETs. Transistor on-currents and source/drain-resistivity are extracted from output and transfer characteristics and compared for various device layer thicknesses from 80 nm down to 15 nm. On-currents are improved up to a factor of 100 for the thinnest transistors by the introduction of self-aligned NiSi. Front and back gate interface qualities are extracted to evaluate their potential impact on mobility and on-currents specifically for ultra-thin devices.

Original languageEnglish
Pages (from-to)497-502
Number of pages6
JournalMicroelectronic Engineering
Volume82
Issue number3-4 SPEC. ISS.
DOIs
Publication statusPublished - Dec 2005
Externally publishedYes

Keywords

  • Nickel silicide
  • SOI-MOSFET
  • Salicide
  • Ultra-Thin-Body (UTB)

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