Nanowire fin field effect transistors via UV-based nanoimprint lithography

A. Fuchs; M. Bender; U. Plachetka; L. Kock; T. Wahlbrink; H. D.B. Gottlob; J. K. Efavi; M. Moeller; M. Schmidt; T. Mollenhauer; C. Moormann; M. C. Lemme; H. Kurz

doi:10.1116/1.2395956

Nanowire fin field effect transistors via UV-based nanoimprint lithography

A. Fuchs, M. Bender, U. Plachetka, L. Kock, T. Wahlbrink, H. D.B. Gottlob, J. K. Efavi, M. Moeller, M. Schmidt, T. Mollenhauer, C. Moormann, M. C. Lemme, H. Kurz

AMO GmbH

Research output: Contribution to journal › Article › peer-review

13 Citations (Scopus)

Abstract

A triple step alignment process for UV nanoimprint lithography (UV-NIL) for the fabrication of nanoscale fin field effect transistors (FinFETs) is presented. An alignment accuracy is demonstrated between two functional layers of less than 20 nm (3). The electrical characterization of the FinFETs fabricated by a full NIL process demonstrates the potential of UV-NIL for future nanoelectronic devices.

Original language	English
Pages (from-to)	2964-2967
Number of pages	4
Journal	Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
Volume	24
Issue number	6
DOIs	https://doi.org/10.1116/1.2395956
Publication status	Published - 2006
Externally published	Yes

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Fuchs, A., Bender, M., Plachetka, U., Kock, L., Wahlbrink, T., Gottlob, H. D. B., Efavi, J. K., Moeller, M., Schmidt, M., Mollenhauer, T., Moormann, C., Lemme, M. C., & Kurz, H. (2006). Nanowire fin field effect transistors via UV-based nanoimprint lithography. Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures, 24(6), 2964-2967. https://doi.org/10.1116/1.2395956

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title = "Nanowire fin field effect transistors via UV-based nanoimprint lithography",

abstract = "A triple step alignment process for UV nanoimprint lithography (UV-NIL) for the fabrication of nanoscale fin field effect transistors (FinFETs) is presented. An alignment accuracy is demonstrated between two functional layers of less than 20 nm (3). The electrical characterization of the FinFETs fabricated by a full NIL process demonstrates the potential of UV-NIL for future nanoelectronic devices.",

author = "A. Fuchs and M. Bender and U. Plachetka and L. Kock and T. Wahlbrink and Gottlob, {H. D.B.} and Efavi, {J. K.} and M. Moeller and M. Schmidt and T. Mollenhauer and C. Moormann and Lemme, {M. C.} and H. Kurz",

year = "2006",

doi = "10.1116/1.2395956",

language = "English",

volume = "24",

pages = "2964--2967",

journal = "Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures",

issn = "1071-1023",

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Fuchs, A, Bender, M, Plachetka, U, Kock, L, Wahlbrink, T, Gottlob, HDB, Efavi, JK, Moeller, M, Schmidt, M, Mollenhauer, T, Moormann, C, Lemme, MC & Kurz, H 2006, 'Nanowire fin field effect transistors via UV-based nanoimprint lithography', Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures, vol. 24, no. 6, pp. 2964-2967. https://doi.org/10.1116/1.2395956

TY - JOUR

T1 - Nanowire fin field effect transistors via UV-based nanoimprint lithography

AU - Fuchs, A.

AU - Bender, M.

AU - Plachetka, U.

AU - Kock, L.

AU - Wahlbrink, T.

AU - Gottlob, H. D.B.

AU - Efavi, J. K.

AU - Moeller, M.

AU - Schmidt, M.

AU - Mollenhauer, T.

AU - Moormann, C.

AU - Lemme, M. C.

AU - Kurz, H.

PY - 2006

Y1 - 2006

N2 - A triple step alignment process for UV nanoimprint lithography (UV-NIL) for the fabrication of nanoscale fin field effect transistors (FinFETs) is presented. An alignment accuracy is demonstrated between two functional layers of less than 20 nm (3). The electrical characterization of the FinFETs fabricated by a full NIL process demonstrates the potential of UV-NIL for future nanoelectronic devices.

AB - A triple step alignment process for UV nanoimprint lithography (UV-NIL) for the fabrication of nanoscale fin field effect transistors (FinFETs) is presented. An alignment accuracy is demonstrated between two functional layers of less than 20 nm (3). The electrical characterization of the FinFETs fabricated by a full NIL process demonstrates the potential of UV-NIL for future nanoelectronic devices.

UR - http://www.scopus.com/inward/record.url?scp=33845238069&partnerID=8YFLogxK

U2 - 10.1116/1.2395956

DO - 10.1116/1.2395956

M3 - Article

AN - SCOPUS:33845238069

SN - 1071-1023

VL - 24

SP - 2964

EP - 2967

JO - Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

JF - Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

IS - 6

ER -

Nanowire fin field effect transistors via UV-based nanoimprint lithography

Abstract

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