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Nanoscale TiN metal gate technology for CMOS integration
M. C. Lemme
,
J. K. Efavi
, T. Mollenhauer
, M. Schmidt
, H. D.B. Gottlob
, T. Wahlbrink
, H. Kurz
AMO GmbH
Research output
:
Contribution to journal
›
Article
›
peer-review
36
Citations (Scopus)
Overview
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Engineering
Metal Gate
100%
Nanoscale
100%
Silicon Dioxide
100%
Gate Stack
50%
Rapid Thermal Annealing
50%
Step Etch
50%
Plasma Damage
50%
Process Step
50%
Interdependency
50%
Nanolithography
50%
Reaction Stoichiometry
50%
Material Science
Annealing
100%
Capacitor
100%
Anisotropy
100%