Abstract
Nickel-Aluminium-Nitride (NiAlN) is investigated as gate material for submicron CMOS technology for the first time. The NiAIN films have been reactively sputtered from a Ni0.5Al31y0.5 target in a mixture of argon and nitrogen gas. The influence of the reactive gas content and process temperatures on the work function is presented. Electrical properties are extracted from high and low frequency capacitance-voltage measurements (QSCV, HFCV). Resistivity measurements are shown for various process conditions. Interface properties are observed by transmission electron microscopy. Primarily results show NiAlN's suitability for use as gate material in a CMOS replacement gate technology. Fabrication of n-type metal-oxide-semiconductor field effect transistors with a NiAlN gates activated at 900°C is demonstrated.
Original language | English |
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Pages (from-to) | 354-359 |
Number of pages | 6 |
Journal | Microelectronic Engineering |
Volume | 76 |
Issue number | 1-4 |
DOIs | |
Publication status | Published - Oct 2004 |
Event | Materials for Advanced Metallization - Brussels Duration: 7 Mar 2004 → 10 Mar 2004 |
Keywords
- CV-curves
- MOSFET
- Metal gate
- NiAlN
- Work function