Investigation of NiAlN as gate-material for submicron CMOS technology

J. K. Efavi, M. C. Lemme, T. Mollenhauer, T. Wahlbrink, T. Bobek, D. Wang, H. D.B. Gottlob, H. Kurz

Research output: Contribution to journalConference articlepeer-review

Abstract

Nickel-Aluminium-Nitride (NiAlN) is investigated as gate material for submicron CMOS technology for the first time. The NiAIN films have been reactively sputtered from a Ni0.5Al31y0.5 target in a mixture of argon and nitrogen gas. The influence of the reactive gas content and process temperatures on the work function is presented. Electrical properties are extracted from high and low frequency capacitance-voltage measurements (QSCV, HFCV). Resistivity measurements are shown for various process conditions. Interface properties are observed by transmission electron microscopy. Primarily results show NiAlN's suitability for use as gate material in a CMOS replacement gate technology. Fabrication of n-type metal-oxide-semiconductor field effect transistors with a NiAlN gates activated at 900°C is demonstrated.

Original languageEnglish
Pages (from-to)354-359
Number of pages6
JournalMicroelectronic Engineering
Volume76
Issue number1-4
DOIs
Publication statusPublished - Oct 2004
EventMaterials for Advanced Metallization - Brussels
Duration: 7 Mar 200410 Mar 2004

Keywords

  • CV-curves
  • MOSFET
  • Metal gate
  • NiAlN
  • Work function

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