Investigation of MOS capacitors and SOI-MOSFETs with epitaxial gadolinium oxide (Gd2O3) and titanium nitride (TiN) electrodes
- T. Echtermeyer
- , H. D.B. Gottlob
- , T. Wahlbrink
- , T. Mollenhauer
- , M. Schmidt
- , J. K. Efavi
- , M. C. Lemme
- , H. Kurz
- AMO GmbH
Research output: Contribution to journal › Article › peer-review
24
Citations
(Scopus)