Investigation of MOS capacitors and SOI-MOSFETs with epitaxial gadolinium oxide (Gd2O3) and titanium nitride (TiN) electrodes

T. Echtermeyer, H. D.B. Gottlob, T. Wahlbrink, T. Mollenhauer, M. Schmidt, J. K. Efavi, M. C. Lemme, H. Kurz

Research output: Contribution to journalArticlepeer-review

22 Citations (Scopus)

Abstract

Electrical properties of metal oxide semiconductor (MOS) capacitors with gate stacks of epitaxial gadolinium oxide (Gd2O3) and titanium nitride (TiN) are studied. The influence of CMOS compatible rapid thermal annealing on these gate stacks is examined. Finally, n- and p-type MOS-field effect transistors (MOSFETs) on silicon on insulator (SOI) material with epitaxial Gd2O3 and TiN gate electrodes are presented.

Original languageEnglish
Pages (from-to)617-621
Number of pages5
JournalSolid-State Electronics
Volume51
Issue number4 SPEC. ISS.
DOIs
Publication statusPublished - Apr 2007
Externally publishedYes

Keywords

  • CMOS
  • High-k
  • Metal gate
  • Rare earth oxide

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