Abstract
Electrical properties of metal oxide semiconductor (MOS) capacitors with gate stacks of epitaxial gadolinium oxide (Gd2O3) and titanium nitride (TiN) are studied. The influence of CMOS compatible rapid thermal annealing on these gate stacks is examined. Finally, n- and p-type MOS-field effect transistors (MOSFETs) on silicon on insulator (SOI) material with epitaxial Gd2O3 and TiN gate electrodes are presented.
Original language | English |
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Pages (from-to) | 617-621 |
Number of pages | 5 |
Journal | Solid-State Electronics |
Volume | 51 |
Issue number | 4 SPEC. ISS. |
DOIs | |
Publication status | Published - Apr 2007 |
Externally published | Yes |
Keywords
- CMOS
- High-k
- Metal gate
- Rare earth oxide