Investigation of high-K gate stacks with epitaxial Gd2O3 and FUSI NiSi metal gates down to CET=0.86 nm
- H. D.B. Gottlob
- , T. Echtermeyer
- , T. Mollenhauer
- , J. K. Efavi
- , M. Schmidt
- , T. Wahlbrink
- , M. C. Lemme
- , H. Kurz
- AMO GmbH
Research output: Contribution to journal › Article › peer-review
6
Citations
(Scopus)