Investigation of high-K gate stacks with epitaxial Gd2O3 and FUSI NiSi metal gates down to CET=0.86 nm

H. D.B. Gottlob, T. Echtermeyer, T. Mollenhauer, J. K. Efavi, M. Schmidt, T. Wahlbrink, M. C. Lemme, H. Kurz

Research output: Contribution to journal › Article › peer-review

6 Citations (Scopus)

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