Investigation of high-K gate stacks with epitaxial Gd2O3 and FUSI NiSi metal gates down to CET=0.86 nm

H. D.B. Gottlob; T. Echtermeyer; T. Mollenhauer; J. K. Efavi; M. Schmidt; T. Wahlbrink; M. C. Lemme; H. Kurz

doi:10.1016/j.mssp.2006.10.007

Investigation of high-K gate stacks with epitaxial Gd₂O₃ and FUSI NiSi metal gates down to CET=0.86 nm

H. D.B. Gottlob, T. Echtermeyer, T. Mollenhauer, J. K. Efavi, M. Schmidt, T. Wahlbrink, M. C. Lemme, H. Kurz

AMO GmbH

Research output: Contribution to journal › Article › peer-review

6 Citations (Scopus)

Abstract

Novel gate stacks with epitaxial gadolinium oxide (Gd₂O₃) high-k dielectrics and fully silicided (FUSI) nickel silicide (NiSi) gate electrodes are investigated. Ultra-low leakage current densities down to 10^-7 A cm^-2 are observed at a capacitance equivalent oxide thickness of CET=1.8 nm. The influence of a titanium nitride (TiN) capping layer during silicidation is studied. Furthermore, films with an ultra-thin CET of 0.86 nm at a Gd₂O₃ thickness of 3.1 nm yield current densities down to 0.5 A cm^-2 at V_g=+1 V. The extracted dielectric constant for these gate stacks ranges from k=13 to 14. These results emphasize the potential of NiSi/Gd₂O₃ gate stacks for future material-based scaling of CMOS technology.

Original language	English
Pages (from-to)	904-908
Number of pages	5
Journal	Materials Science in Semiconductor Processing
Volume	9
Issue number	6
DOIs	https://doi.org/10.1016/j.mssp.2006.10.007
Publication status	Published - Dec 2006
Externally published	Yes

Keywords

Epitaxial dielectric
Fully silicided (FUSI)
GdO
High-k
Metal gate
NiSi
TiN

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10.1016/j.mssp.2006.10.007

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title = "Investigation of high-K gate stacks with epitaxial Gd2O3 and FUSI NiSi metal gates down to CET=0.86 nm",

abstract = "Novel gate stacks with epitaxial gadolinium oxide (Gd2O3) high-k dielectrics and fully silicided (FUSI) nickel silicide (NiSi) gate electrodes are investigated. Ultra-low leakage current densities down to 10-7 A cm-2 are observed at a capacitance equivalent oxide thickness of CET=1.8 nm. The influence of a titanium nitride (TiN) capping layer during silicidation is studied. Furthermore, films with an ultra-thin CET of 0.86 nm at a Gd2O3 thickness of 3.1 nm yield current densities down to 0.5 A cm-2 at Vg=+1 V. The extracted dielectric constant for these gate stacks ranges from k=13 to 14. These results emphasize the potential of NiSi/Gd2O3 gate stacks for future material-based scaling of CMOS technology.",

keywords = "Epitaxial dielectric, Fully silicided (FUSI), GdO, High-k, Metal gate, NiSi, TiN",

author = "Gottlob, {H. D.B.} and T. Echtermeyer and T. Mollenhauer and Efavi, {J. K.} and M. Schmidt and T. Wahlbrink and Lemme, {M. C.} and H. Kurz",

year = "2006",

month = dec,

doi = "10.1016/j.mssp.2006.10.007",

language = "English",

volume = "9",

pages = "904--908",

journal = "Materials Science in Semiconductor Processing",

issn = "1369-8001",

publisher = "Elsevier Ltd.",

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TY - JOUR

T1 - Investigation of high-K gate stacks with epitaxial Gd2O3 and FUSI NiSi metal gates down to CET=0.86 nm

AU - Gottlob, H. D.B.

AU - Echtermeyer, T.

AU - Mollenhauer, T.

AU - Efavi, J. K.

AU - Schmidt, M.

AU - Wahlbrink, T.

AU - Lemme, M. C.

AU - Kurz, H.

PY - 2006/12

Y1 - 2006/12

N2 - Novel gate stacks with epitaxial gadolinium oxide (Gd2O3) high-k dielectrics and fully silicided (FUSI) nickel silicide (NiSi) gate electrodes are investigated. Ultra-low leakage current densities down to 10-7 A cm-2 are observed at a capacitance equivalent oxide thickness of CET=1.8 nm. The influence of a titanium nitride (TiN) capping layer during silicidation is studied. Furthermore, films with an ultra-thin CET of 0.86 nm at a Gd2O3 thickness of 3.1 nm yield current densities down to 0.5 A cm-2 at Vg=+1 V. The extracted dielectric constant for these gate stacks ranges from k=13 to 14. These results emphasize the potential of NiSi/Gd2O3 gate stacks for future material-based scaling of CMOS technology.

AB - Novel gate stacks with epitaxial gadolinium oxide (Gd2O3) high-k dielectrics and fully silicided (FUSI) nickel silicide (NiSi) gate electrodes are investigated. Ultra-low leakage current densities down to 10-7 A cm-2 are observed at a capacitance equivalent oxide thickness of CET=1.8 nm. The influence of a titanium nitride (TiN) capping layer during silicidation is studied. Furthermore, films with an ultra-thin CET of 0.86 nm at a Gd2O3 thickness of 3.1 nm yield current densities down to 0.5 A cm-2 at Vg=+1 V. The extracted dielectric constant for these gate stacks ranges from k=13 to 14. These results emphasize the potential of NiSi/Gd2O3 gate stacks for future material-based scaling of CMOS technology.

KW - Epitaxial dielectric

KW - Fully silicided (FUSI)

KW - GdO

KW - High-k

KW - Metal gate

KW - NiSi

KW - TiN

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U2 - 10.1016/j.mssp.2006.10.007

DO - 10.1016/j.mssp.2006.10.007

M3 - Article

AN - SCOPUS:33846050056

SN - 1369-8001

VL - 9

SP - 904

EP - 908

JO - Materials Science in Semiconductor Processing

JF - Materials Science in Semiconductor Processing

IS - 6

ER -

Investigation of high-K gate stacks with epitaxial Gd₂O₃ and FUSI NiSi metal gates down to CET=0.86 nm

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Keywords

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