Impact of Al-, Ni-, TiN-, and Mo-metal gates on MOCVD-grown HfO2 and ZrO2 high-κ dielectrics

S. Abermann, J. Efavi, G. Sjöblom, M. Lemme, J. Olsson, E. Bertagnolli

Research output: Contribution to journalArticlepeer-review

7 Citations (Scopus)

Abstract

In this work we compare the impacts of nickel (Ni), titanium-nitride (TiN), molybdenum (Mo), and aluminium (Al), gates on MOS capacitors incorporating HfO2- or ZrO2-dielectrics. The primary focus lies on interface trapping, oxide charging, and thermodynamical stability during different annealing steps of these gate stacks. Whereas Ni, Mo, and especially TiN are investigated as most promising candidates for future CMOS devices, Al acted as reference gate material to benchmark the parameters. Post-metallization annealing of both, TiN- and Mo-stacks, resulted in very promising electrical characteristics. However, gate stacks annealed at temperatures of 800 °C or 950 °C show thermodynamic instability and related undesirable high leakage currents.

Original languageEnglish
Pages (from-to)536-539
Number of pages4
JournalMicroelectronics Reliability
Volume47
Issue number4-5 SPEC. ISS.
DOIs
Publication statusPublished - Apr 2007
Externally publishedYes

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