TY - JOUR
T1 - Impact of Al-, Ni-, TiN-, and Mo-metal gates on MOCVD-grown HfO2 and ZrO2 high-κ dielectrics
AU - Abermann, S.
AU - Efavi, J.
AU - Sjöblom, G.
AU - Lemme, M.
AU - Olsson, J.
AU - Bertagnolli, E.
PY - 2007/4
Y1 - 2007/4
N2 - In this work we compare the impacts of nickel (Ni), titanium-nitride (TiN), molybdenum (Mo), and aluminium (Al), gates on MOS capacitors incorporating HfO2- or ZrO2-dielectrics. The primary focus lies on interface trapping, oxide charging, and thermodynamical stability during different annealing steps of these gate stacks. Whereas Ni, Mo, and especially TiN are investigated as most promising candidates for future CMOS devices, Al acted as reference gate material to benchmark the parameters. Post-metallization annealing of both, TiN- and Mo-stacks, resulted in very promising electrical characteristics. However, gate stacks annealed at temperatures of 800 °C or 950 °C show thermodynamic instability and related undesirable high leakage currents.
AB - In this work we compare the impacts of nickel (Ni), titanium-nitride (TiN), molybdenum (Mo), and aluminium (Al), gates on MOS capacitors incorporating HfO2- or ZrO2-dielectrics. The primary focus lies on interface trapping, oxide charging, and thermodynamical stability during different annealing steps of these gate stacks. Whereas Ni, Mo, and especially TiN are investigated as most promising candidates for future CMOS devices, Al acted as reference gate material to benchmark the parameters. Post-metallization annealing of both, TiN- and Mo-stacks, resulted in very promising electrical characteristics. However, gate stacks annealed at temperatures of 800 °C or 950 °C show thermodynamic instability and related undesirable high leakage currents.
UR - http://www.scopus.com/inward/record.url?scp=34247166249&partnerID=8YFLogxK
U2 - 10.1016/j.microrel.2007.01.002
DO - 10.1016/j.microrel.2007.01.002
M3 - Article
AN - SCOPUS:34247166249
SN - 0026-2714
VL - 47
SP - 536
EP - 539
JO - Microelectronics Reliability
JF - Microelectronics Reliability
IS - 4-5 SPEC. ISS.
ER -