Impact of AL, NI, and tin metal gates on ZRO2-MOS capacitors

S. Abermann; J. Efavi; A. Lugstein; E. Auer; H. Gottlob; M. Schmidt; M. Lemme; E. Bertagnolli

doi:10.1149/1.2209300

Impact of AL, NI, and tin metal gates on ZRO₂-MOS capacitors

S. Abermann, J. Efavi, A. Lugstein, E. Auer, H. Gottlob, M. Schmidt, M. Lemme, E. Bertagnolli

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

1 Citation (Scopus)

Abstract

We compare the impact of Aluminum, Nickel and Titanium-Nitride as gate materials on MOS capacitors incorporating metal organic chemical vapor deposited (MOCVD) ZrO₂. Post metallization annealing (PMA) in forming gas atmosphere on the electrical characteristics of the various gate stacks is a further issue. Aluminum was primarily investigated as a reference material. Whereas TiN-stacks show very promising electrical characteristics necessary for future CMOS devices, Ni-MOS capacitors exhibit an undesired high frequency behavior. copyright The Electrochemical Society.

Original language	English
Title of host publication	Physics and Technology of High-k Gate Dielectrics III
Publisher	Electrochemical Society Inc.
Pages	507-515
Number of pages	9
Edition	5
ISBN (Electronic)	1566774446
DOIs	https://doi.org/10.1149/1.2209300
Publication status	Published - 2006
Externally published	Yes
Event	3rd International Symposium on High Dielectric Constant Gate Stacks - 208th Meeting of the Electrochemical Society - Los Angeles, CA Duration: 16 Oct 2005 → 21 Oct 2005

Publication series

Name	ECS Transactions
Number	5
Volume	1
ISSN (Print)	1938-5862
ISSN (Electronic)	1938-6737

Conference

Conference	3rd International Symposium on High Dielectric Constant Gate Stacks - 208th Meeting of the Electrochemical Society
Country/Territory	United States
City	Los Angeles, CA
Period	16/10/05 → 21/10/05

Access to Document

10.1149/1.2209300

Cite this

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title = "Impact of AL, NI, and tin metal gates on ZRO2-MOS capacitors",

abstract = "We compare the impact of Aluminum, Nickel and Titanium-Nitride as gate materials on MOS capacitors incorporating metal organic chemical vapor deposited (MOCVD) ZrO2. Post metallization annealing (PMA) in forming gas atmosphere on the electrical characteristics of the various gate stacks is a further issue. Aluminum was primarily investigated as a reference material. Whereas TiN-stacks show very promising electrical characteristics necessary for future CMOS devices, Ni-MOS capacitors exhibit an undesired high frequency behavior. copyright The Electrochemical Society.",

author = "S. Abermann and J. Efavi and A. Lugstein and E. Auer and H. Gottlob and M. Schmidt and M. Lemme and E. Bertagnolli",

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language = "English",

series = "ECS Transactions",

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booktitle = "Physics and Technology of High-k Gate Dielectrics III",

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note = "3rd International Symposium on High Dielectric Constant Gate Stacks - 208th Meeting of the Electrochemical Society ; Conference date: 16-10-2005 Through 21-10-2005",

}

Abermann, S, Efavi, J, Lugstein, A, Auer, E, Gottlob, H, Schmidt, M, Lemme, M & Bertagnolli, E 2006, Impact of AL, NI, and tin metal gates on ZRO₂-MOS capacitors. in Physics and Technology of High-k Gate Dielectrics III. 5 edn, ECS Transactions, no. 5, vol. 1, Electrochemical Society Inc., pp. 507-515, 3rd International Symposium on High Dielectric Constant Gate Stacks - 208th Meeting of the Electrochemical Society, Los Angeles, CA, United States, 16/10/05. https://doi.org/10.1149/1.2209300

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AU - Abermann, S.

AU - Efavi, J.

AU - Lugstein, A.

AU - Auer, E.

AU - Gottlob, H.

AU - Schmidt, M.

AU - Lemme, M.

AU - Bertagnolli, E.

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AB - We compare the impact of Aluminum, Nickel and Titanium-Nitride as gate materials on MOS capacitors incorporating metal organic chemical vapor deposited (MOCVD) ZrO2. Post metallization annealing (PMA) in forming gas atmosphere on the electrical characteristics of the various gate stacks is a further issue. Aluminum was primarily investigated as a reference material. Whereas TiN-stacks show very promising electrical characteristics necessary for future CMOS devices, Ni-MOS capacitors exhibit an undesired high frequency behavior. copyright The Electrochemical Society.

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