Abstract
New three-dimensional device concepts are considered necessary for the ultimate scaling of the gate length of metal-oxide-semiconductor field effect transistors (MOSFETs). Both Triple-Gate field effect transistors and FinFETs require a gate etch process with excellent selectivity over the gate oxide material. In this work, a highly selective, anisotropic gate etch process using HBr and O2 as the reactive gases in an inductively coupled plasma reactive ion etch tool is described. Polysilicon thickness measurements have been taken to calculate etch rate and uniformity. Polysilicon wafers for each experimental condition were given different overetch times and SiO2 losses were plotted against time, with the gradient yielding the SiO2 etch rate. The optimized etch process yields excellent results for nanoscale polysilicon gates.
Original language | English |
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Pages (from-to) | 346-350 |
Number of pages | 5 |
Journal | Microelectronic Engineering |
Volume | 73-74 |
DOIs | |
Publication status | Published - Jun 2004 |
Externally published | Yes |
Event | Micro and Nano Engineering 2003 - Cambridge Duration: 22 Sep 2003 → 25 Sep 2003 |
Keywords
- FinFET
- HBr
- SOI
- Triple-Gate MOSFET