Abstract
Reactive ion etch (RIE) processes with HBr/O2 chemistry are optimized for processing of functional nanostructures based on silicon and polysilicon. The etch rate, etch selectivity, anisotropy and sidewall roughness are investigated for specific applications. The potential of this process technology for nanoscale functional devices is demonstrated by MOSFETs with 12 nm gate length and optimized photonic devices with ultrahigh Q-factors.
Original language | English |
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Pages (from-to) | 212-217 |
Number of pages | 6 |
Journal | Microelectronic Engineering |
Volume | 78-79 |
Issue number | 1-4 |
DOIs | |
Publication status | Published - Mar 2005 |
Externally published | Yes |
Event | Proceedings of the 30th International Conference on Micro- and Nano-Engineering - Duration: 19 Sep 2004 → 22 Sep 2004 |
Keywords
- EJ-MOSFET
- HBr
- ICP-RIE
- Microring resonator
- SOI
- Silicon photonics