Highly selective etch process for silicon-on-insulator nano-devices

T. Wahlbrink, T. Mollenhauer, Y. M. Georgiev, W. Henschel, J. K. Efavi, H. D.B. Gottlob, M. C. Lemme, H. Kurz, J. Niehusmann, P. Haring Bolivar

Research output: Contribution to journalConference articlepeer-review

35 Citations (Scopus)

Abstract

Reactive ion etch (RIE) processes with HBr/O2 chemistry are optimized for processing of functional nanostructures based on silicon and polysilicon. The etch rate, etch selectivity, anisotropy and sidewall roughness are investigated for specific applications. The potential of this process technology for nanoscale functional devices is demonstrated by MOSFETs with 12 nm gate length and optimized photonic devices with ultrahigh Q-factors.

Original languageEnglish
Pages (from-to)212-217
Number of pages6
JournalMicroelectronic Engineering
Volume78-79
Issue number1-4
DOIs
Publication statusPublished - Mar 2005
Externally publishedYes
EventProceedings of the 30th International Conference on Micro- and Nano-Engineering -
Duration: 19 Sep 200422 Sep 2004

Keywords

  • EJ-MOSFET
  • HBr
  • ICP-RIE
  • Microring resonator
  • SOI
  • Silicon photonics

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