Growth and characterization of silicon oxide films formed in the presence of Si, SiC, and Si3N4

Yaqiong Li, Lucas Nana Wiredu Damoah, Lifeng Zhang

Research output: Contribution to journalArticlepeer-review

7 Citations (Scopus)

Abstract

In order to comparatively study the growth and characterization of silicon oxide films on Si-based substrates, top-cut solar grade silicon (SOG-Si) containing Si3N4 rods and SiC lumps were used as raw materials and respectively heated at 1773 K and 1873 K under Ar gas. The samples were investigated by Focus Ion Beam/Scanning Electron Microscope (FIB/SEM) and Energy Dispersive Spectroscopy (EDS). Results indicated that silicon oxides with different morphologies successfully grew on the substrates via various mechanisms. Passive oxidation was evident in the formation of a dense SiO2 surface layer on the base material at 1773 K, while active oxidation was evident in the formation of SiO2 with particle, rod, and nanowire-like morphologies, which was the re-oxidation product of SiO at 1873 K under the active-to-passive transition. Si, SiC, and Si3N4 have the similar oxidation tendency to form silicon oxides under either passive or active regimes.

Original languageEnglish
Pages (from-to)20-28
Number of pages9
JournalMaterials Science in Semiconductor Processing
Volume54
DOIs
Publication statusPublished - 1 Nov 2016

Keywords

  • Characterization
  • Oxidation-growth
  • Si
  • SiC
  • SiN
  • Silicon Oxide Films

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