Enhancement in ZnS:Mn triboluminescent film intensity using ZnO films as buffer layers

O. Agyeman; C. N. Xu; S. W. Shi; X. G. Zheng; M. Suzuki

doi:10.1117/12.456955

Enhancement in ZnS:Mn triboluminescent film intensity using ZnO films as buffer layers

O. Agyeman, C. N. Xu, S. W. Shi, X. G. Zheng, M. Suzuki

Natl. Inst. Adv. Indust. Sci Technol

Research output: Contribution to journal › Conference article › peer-review

2 Citations (Scopus)

Abstract

We have investigated the effect of ZnO films used as buffer layers on the triboluminescence (TrL) intensity of ZnS:Mn thin films on quartz substrates using RF magnetron sputtering method and annealing technique. Highly oriented film of ZnO was firstly deposited on quartz glass substrate and then the ZnS:Mn film was successfully deposited on the ZnO film with orientation. By annealing at 5% H₂ in Ar ambient, the crystallinity of both ZnO and ZnS:Mn films was increased. It was found that the addition of the ZnO buffer layer greatly improve the TrL intensity of the ZnS:Mn films.

Original language	English
Pages (from-to)	181-187
Number of pages	7
Journal	Proceedings of SPIE - The International Society for Optical Engineering
Volume	4576
DOIs	https://doi.org/10.1117/12.456955
Publication status	Published - 2001
Externally published	Yes
Event	Advanced Environmental Sensing Technology II - Newton, MA Duration: 31 Oct 2001 → 1 Nov 2001

Keywords

Buffer layers
Crystallinity
Defects
Triboluminescence
ZnS thin films

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10.1117/12.456955

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@article{0d3fb153e33a471e99790b539475752e,

title = "Enhancement in ZnS:Mn triboluminescent film intensity using ZnO films as buffer layers",

abstract = "We have investigated the effect of ZnO films used as buffer layers on the triboluminescence (TrL) intensity of ZnS:Mn thin films on quartz substrates using RF magnetron sputtering method and annealing technique. Highly oriented film of ZnO was firstly deposited on quartz glass substrate and then the ZnS:Mn film was successfully deposited on the ZnO film with orientation. By annealing at 5\% H2 in Ar ambient, the crystallinity of both ZnO and ZnS:Mn films was increased. It was found that the addition of the ZnO buffer layer greatly improve the TrL intensity of the ZnS:Mn films.",

keywords = "Buffer layers, Crystallinity, Defects, Triboluminescence, ZnS thin films",

author = "O. Agyeman and Xu, \{C. N.\} and Shi, \{S. W.\} and Zheng, \{X. G.\} and M. Suzuki",

year = "2001",

doi = "10.1117/12.456955",

language = "English",

volume = "4576",

pages = "181--187",

journal = "Proceedings of SPIE - The International Society for Optical Engineering",

issn = "0277-786X",

publisher = "SPIE",

note = "Advanced Environmental Sensing Technology II ; Conference date: 31-10-2001 Through 01-11-2001",

}

TY - JOUR

T1 - Enhancement in ZnS:Mn triboluminescent film intensity using ZnO films as buffer layers

AU - Agyeman, O.

AU - Xu, C. N.

AU - Shi, S. W.

AU - Zheng, X. G.

AU - Suzuki, M.

PY - 2001

Y1 - 2001

N2 - We have investigated the effect of ZnO films used as buffer layers on the triboluminescence (TrL) intensity of ZnS:Mn thin films on quartz substrates using RF magnetron sputtering method and annealing technique. Highly oriented film of ZnO was firstly deposited on quartz glass substrate and then the ZnS:Mn film was successfully deposited on the ZnO film with orientation. By annealing at 5% H2 in Ar ambient, the crystallinity of both ZnO and ZnS:Mn films was increased. It was found that the addition of the ZnO buffer layer greatly improve the TrL intensity of the ZnS:Mn films.

AB - We have investigated the effect of ZnO films used as buffer layers on the triboluminescence (TrL) intensity of ZnS:Mn thin films on quartz substrates using RF magnetron sputtering method and annealing technique. Highly oriented film of ZnO was firstly deposited on quartz glass substrate and then the ZnS:Mn film was successfully deposited on the ZnO film with orientation. By annealing at 5% H2 in Ar ambient, the crystallinity of both ZnO and ZnS:Mn films was increased. It was found that the addition of the ZnO buffer layer greatly improve the TrL intensity of the ZnS:Mn films.

KW - Buffer layers

KW - Crystallinity

KW - Defects

KW - Triboluminescence

KW - ZnS thin films

UR - https://www.scopus.com/pages/publications/0035778172

U2 - 10.1117/12.456955

DO - 10.1117/12.456955

M3 - Conference article

AN - SCOPUS:0035778172

SN - 0277-786X

VL - 4576

SP - 181

EP - 187

JO - Proceedings of SPIE - The International Society for Optical Engineering

JF - Proceedings of SPIE - The International Society for Optical Engineering

T2 - Advanced Environmental Sensing Technology II

Y2 - 31 October 2001 through 1 November 2001

ER -

Enhancement in ZnS:Mn triboluminescent film intensity using ZnO films as buffer layers

Abstract

Keywords

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