Effect of doping on domain suppression in the presence of hot electrons in semiconducting achiral carbon nanotubes

Effect of doping semiconducting achiral carbon nanotubes on domain suppression prerequisite for potential generation of terahertz radiations in the presence of hot electrons has been theoretically considered. This was done by solving the semiclassical Boltzmann's transport equation in the presence of hot electrons source to derive the current density as a function of constant electric field and chemical potential of semiconducting achiral carbon nanotubes (CNTs). Plots of normalized current density versus electric field strength for semiconducting achiral CNTs as the chemical potential (μ) representing the degree of doping increases from 1.4 eV to 2.0 eV (i.e. heavily doped CNT) revealed an increase in positive differential conductivity (PDC) that results in enhancement of domain suppression prerequisite for generation of terahertz radiations. Also, it has been observed that PDC which is associated with domain suppression increases as the relative thickness and carrier temperature of semiconducting CNTs increase. Therefore, the study predicts heavily doped larger radius semiconducting achiral CNT at a higher carrier temperature as a better candidate for generation of terahertz radiations whose applications are relevant in current-day technology, industry, and research.