Comparison of metal gate electrodes on MOCVD HfO2

M. C. Lemme; J. K. Efavi; H. D.B. Gottlob; T. Mollenhauer; T. Wahlbrink; H. Kurz

doi:10.1016/j.microrel.2004.11.018

Comparison of metal gate electrodes on MOCVD HfO₂

M. C. Lemme, J. K. Efavi, H. D.B. Gottlob, T. Mollenhauer, T. Wahlbrink, H. Kurz

AMO GmbH

Research output: Contribution to journal › Article › peer-review

5 Citations (Scopus)

Abstract

Metal gate electrodes of sputtered aluminum (Al), titanium nitride (TiN) and nickel aluminum nitride (NiAlN) are investigated in this work. They are compared with respect to their compatibility with metal organic chemical vapor deposited (MOCVD) hafnium dioxide (HfO₂) gate dielectrics. TiN, with a midgap work function of 4.65 eV on SiO₂, exhibits promising characteristics as metal gate on HfO₂. In addition, encouraging results are presented for the ternary metal NiAlN, whereas classic Al electrodes are found unstable in conjunction with HfO₂.

Original language	English
Pages (from-to)	953-956
Number of pages	4
Journal	Microelectronics Reliability
Volume	45
Issue number	5-6
DOIs	https://doi.org/10.1016/j.microrel.2004.11.018
Publication status	Published - May 2005
Externally published	Yes

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10.1016/j.microrel.2004.11.018

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title = "Comparison of metal gate electrodes on MOCVD HfO2",

abstract = "Metal gate electrodes of sputtered aluminum (Al), titanium nitride (TiN) and nickel aluminum nitride (NiAlN) are investigated in this work. They are compared with respect to their compatibility with metal organic chemical vapor deposited (MOCVD) hafnium dioxide (HfO2) gate dielectrics. TiN, with a midgap work function of 4.65 eV on SiO2, exhibits promising characteristics as metal gate on HfO2. In addition, encouraging results are presented for the ternary metal NiAlN, whereas classic Al electrodes are found unstable in conjunction with HfO2.",

author = "Lemme, {M. C.} and Efavi, {J. K.} and Gottlob, {H. D.B.} and T. Mollenhauer and T. Wahlbrink and H. Kurz",

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AU - Lemme, M. C.

AU - Efavi, J. K.

AU - Gottlob, H. D.B.

AU - Mollenhauer, T.

AU - Wahlbrink, T.

AU - Kurz, H.

PY - 2005/5

Y1 - 2005/5

N2 - Metal gate electrodes of sputtered aluminum (Al), titanium nitride (TiN) and nickel aluminum nitride (NiAlN) are investigated in this work. They are compared with respect to their compatibility with metal organic chemical vapor deposited (MOCVD) hafnium dioxide (HfO2) gate dielectrics. TiN, with a midgap work function of 4.65 eV on SiO2, exhibits promising characteristics as metal gate on HfO2. In addition, encouraging results are presented for the ternary metal NiAlN, whereas classic Al electrodes are found unstable in conjunction with HfO2.

AB - Metal gate electrodes of sputtered aluminum (Al), titanium nitride (TiN) and nickel aluminum nitride (NiAlN) are investigated in this work. They are compared with respect to their compatibility with metal organic chemical vapor deposited (MOCVD) hafnium dioxide (HfO2) gate dielectrics. TiN, with a midgap work function of 4.65 eV on SiO2, exhibits promising characteristics as metal gate on HfO2. In addition, encouraging results are presented for the ternary metal NiAlN, whereas classic Al electrodes are found unstable in conjunction with HfO2.

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SP - 953

EP - 956

JO - Microelectronics Reliability

JF - Microelectronics Reliability

IS - 5-6

ER -

Comparison of metal gate electrodes on MOCVD HfO₂

Abstract

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