@inproceedings{41d10c4e0db741df94b6d3c59d1368ca,
title = "Comparative study on the impact of TiN and Mo metal gates on MOCVD-grown HfO2 and ZrO2 high-κ dielectrics for CMOS technology",
abstract = "We compare metal oxide semiconductor capacitors, investigating Titanium-Nitride and Molybdenum as gate materials, as well as metal organic chemical vapor deposited ZrO2 and HfO2 as high-κ dielectrics, respectively. The impact of different annealing steps on the electrical characteristics of the various gate stacks is a further issue. The positive effect of post metallization annealing in forming gas atmosphere as well as observed mid-gap pinning of TiN and Mo metal gates is presented.",
keywords = "Dielectrics, HfO, High-k, MOCVD, Metal gate, Mo, TiN, ZrO",
author = "S. Abermann and G. Sjoblom and J. Efavi and M. Lemme and J. Olsson and E. Bertagnolli",
year = "2007",
doi = "10.1063/1.2729883",
language = "English",
isbn = "9780735403970",
series = "AIP Conference Proceedings",
pages = "293--294",
booktitle = "Physics of Semiconductors - 28th International Conference on the Physics of Semiconductors, ICPS 2006, Part A and B",
note = "28th International Conference on the Physics of Semiconductors, ICPS 2006 ; Conference date: 24-07-2006 Through 28-07-2006",
}