Abstract
Epitaxial gadolinium oxide (Gd2O3) high-k dielectrics are investigated with respect to their CMOS compatibility in metal oxide semiconductor (MOS) capacitors and field effect transistors (MOSFETs). MOS capacitors with various gate electrodes are exposed to typical CMOS process steps and evaluated with capacitance voltage (CV) and current voltage (JV) measurements. The effects of high temperature processes on thermal stabilities of channel/dielectric and dielectric/gate electrode interfaces is studied in detail. A feasible CMOS process with epitaxial gate oxides and metal gate electrodes is identified and demonstrated by a fully functional n-MOSFET for the first time.
Original language | English |
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Pages (from-to) | 979-985 |
Number of pages | 7 |
Journal | Solid-State Electronics |
Volume | 50 |
Issue number | 6 |
DOIs | |
Publication status | Published - Jun 2006 |
Externally published | Yes |
Keywords
- CMOS integration
- Epitaxial gate dielectric
- Gadolinium oxide (GdO)
- High-k gate dielectric
- Metal gate electrode
- Silicon on insulator (SOI)