CMOS compatibility of crystalline Gd2O2 high-K / metal gate stacks

H. D.B. Gottlob; T. Echtermeyer; T. Mollenhauer; J. Efavi; M. Schmidt; T. Wahlbrink; M. C. Lemme; H. Kurz

CMOS compatibility of crystalline Gd₂O₂ high-K / metal gate stacks

H. D.B. Gottlob
, T. Echtermeyer
, T. Mollenhauer
, J. Efavi
, M. Schmidt
, T. Wahlbrink
, M. C. Lemme
, H. Kurz

AMO GmbH

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

1 Citation (Scopus)

Original language	English
Title of host publication	2005 International Semiconductor Device Research Symposium
Pages	276-277
Number of pages	2
Publication status	Published - 2005
Externally published	Yes
Event	2005 International Semiconductor Device Research Symposium - Bethesda, MD Duration: 7 Dec 2005 → 9 Dec 2005

Publication series

Name	2005 International Semiconductor Device Research Symposium
Volume	2005

Conference

Conference	2005 International Semiconductor Device Research Symposium
Country/Territory	United States
City	Bethesda, MD
Period	7/12/05 → 9/12/05

Cite this

@inproceedings{9670ab6a6c4f42b48319101aab50b15f,

title = "CMOS compatibility of crystalline Gd2O2 high-K / metal gate stacks",

author = "Gottlob, \{H. D.B.\} and T. Echtermeyer and T. Mollenhauer and J. Efavi and M. Schmidt and T. Wahlbrink and Lemme, \{M. C.\} and H. Kurz",

year = "2005",

language = "English",

isbn = "1424400848",

series = "2005 International Semiconductor Device Research Symposium",

pages = "276--277",

booktitle = "2005 International Semiconductor Device Research Symposium",

note = "2005 International Semiconductor Device Research Symposium ; Conference date: 07-12-2005 Through 09-12-2005",

}

Gottlob, HDB, Echtermeyer, T, Mollenhauer, T, Efavi, J, Schmidt, M, Wahlbrink, T, Lemme, MC & Kurz, H 2005, CMOS compatibility of crystalline Gd₂O₂ high-K / metal gate stacks. in 2005 International Semiconductor Device Research Symposium., 1596092, 2005 International Semiconductor Device Research Symposium, vol. 2005, pp. 276-277, 2005 International Semiconductor Device Research Symposium, Bethesda, MD, United States, 7/12/05.

CMOS compatibility of crystalline Gd₂O₂ high-K / metal gate stacks. / Gottlob, H. D.B.; Echtermeyer, T.; Mollenhauer, T. et al.
2005 International Semiconductor Device Research Symposium. 2005. p. 276-277 1596092 (2005 International Semiconductor Device Research Symposium; Vol. 2005).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - CMOS compatibility of crystalline Gd2O2 high-K / metal gate stacks

AU - Gottlob, H. D.B.

AU - Echtermeyer, T.

AU - Mollenhauer, T.

AU - Efavi, J.

AU - Schmidt, M.

AU - Wahlbrink, T.

AU - Lemme, M. C.

AU - Kurz, H.

PY - 2005

Y1 - 2005

UR - https://www.scopus.com/pages/publications/33847236929

M3 - Conference contribution

AN - SCOPUS:33847236929

SN - 1424400848

SN - 9781424400843

T3 - 2005 International Semiconductor Device Research Symposium

SP - 276

EP - 277

BT - 2005 International Semiconductor Device Research Symposium

T2 - 2005 International Semiconductor Device Research Symposium

Y2 - 7 December 2005 through 9 December 2005

ER -

CMOS compatibility of crystalline Gd2O2 high-K / metal gate stacks

Publication series

Conference

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Cite this

CMOS compatibility of crystalline Gd₂O₂ high-K / metal gate stacks