Abstract
Charge transport measurements in compressed bulk graphene oxide (GO) have been studied within the temperature range 15 – 450 K. Structural properties and surface morphologies of the bulk compressed GO were studied using X-ray diffraction and transmission electron microscopy. Raman and X-ray photoelectron spectroscopies were also used to confirm the presence of graphitic phases and the various functional groups in the GO, respectively. Current–voltage characteristics of the GO measured with gold (Au) electrodes at different temperatures showed no Schottky barrier at the Au/GO interface. At low temperatures and low bias voltages, the electron transport through the compressed GO sample showed no significant voltage dependence, which is consistent with a direct tunneling mechanism at all the bias voltages (0.01 – 1.0 V). It was also observed that no Fowler–Nordheim transport mechanism occurred within this bias voltage range.
| Original language | English |
|---|---|
| Pages (from-to) | 552-558 |
| Number of pages | 7 |
| Journal | International Journal of Materials Research |
| Volume | 111 |
| Issue number | 7 |
| DOIs | |
| Publication status | Published - Jul 2020 |
Keywords
- Bias voltage
- Compressed graphene oxide
- Raman spectroscopy
- X-ray photoelectron spectroscopy