Approaches to CMOS integration of epitaxial gadolinium oxide high-K dielectrics

H. D.B. Gottlob; T. Echtermeyer; T. Mollenhauer; M. Schmidt; J. K. Efavi; T. Wahlbrink; M. C. Lemme; H. Kurz; R. Endres; Y. Stefanov; U. Schwalke; M. Czernohorsky; E. Bugiel; A. Fissel; H. J. Osten

doi:10.1109/ESSDER.2006.307660

Approaches to CMOS integration of epitaxial gadolinium oxide high-K dielectrics

H. D.B. Gottlob
, T. Echtermeyer
, T. Mollenhauer
, M. Schmidt
, J. K. Efavi
, T. Wahlbrink
, M. C. Lemme
, H. Kurz
, R. Endres
, Y. Stefanov
, U. Schwalke
, M. Czernohorsky
, E. Bugiel
, A. Fissel
, H. J. Osten

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

2 Citations (Scopus)

Abstract

Two process concepts for Integration of novel gate stacks with epitaxial high-K dielectrics and metal gate electrodes are presented. A "gate first" process based on a planar gate stack on ultra thin SOI material has been used for successful fabrication of MOSFETs with TiN/Gd₃O ₃ gate stack. Furthermore MOSFETs with W/Gd₂O₃ gate stack have been fabricated with a replacement gate process. This is the first successful attempt to integrate crystalline high-K dielectrics into a "gentle" damascene metal gate process in order to reduce process induced oxide damages.

Original language	English
Title of host publication	ESSDERC 2006 - Proceedings of the 36th European Solid-State Device Research Conference
Publisher	IEEE Computer Society
Pages	150-153
Number of pages	4
ISBN (Print)	1424403014, 9781424403011
DOIs	https://doi.org/10.1109/ESSDER.2006.307660
Publication status	Published - 2006
Externally published	Yes
Event	ESSDERC 2006 - 36th European Solid-State Device Research Conference - Montreux Duration: 19 Sep 2006 → 21 Sep 2006

Publication series

Name	ESSDERC 2006 - Proceedings of the 36th European Solid-State Device Research Conference

Conference

Conference	ESSDERC 2006 - 36th European Solid-State Device Research Conference
Country/Territory	Switzerland
City	Montreux
Period	19/09/06 → 21/09/06

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10.1109/ESSDER.2006.307660

Cite this

Gottlob, H. D. B., Echtermeyer, T., Mollenhauer, T., Schmidt, M., Efavi, J. K., Wahlbrink, T., Lemme, M. C., Kurz, H., Endres, R., Stefanov, Y., Schwalke, U., Czernohorsky, M., Bugiel, E., Fissel, A., & Osten, H. J. (2006). Approaches to CMOS integration of epitaxial gadolinium oxide high-K dielectrics. In ESSDERC 2006 - Proceedings of the 36th European Solid-State Device Research Conference (pp. 150-153). Article 4099878 (ESSDERC 2006 - Proceedings of the 36th European Solid-State Device Research Conference). IEEE Computer Society. https://doi.org/10.1109/ESSDER.2006.307660

@inproceedings{c83a0acfb6e744659c4c58e60d81b012,

title = "Approaches to CMOS integration of epitaxial gadolinium oxide high-K dielectrics",

abstract = "Two process concepts for Integration of novel gate stacks with epitaxial high-K dielectrics and metal gate electrodes are presented. A {"}gate first{"} process based on a planar gate stack on ultra thin SOI material has been used for successful fabrication of MOSFETs with TiN/Gd3O 3 gate stack. Furthermore MOSFETs with W/Gd2O3 gate stack have been fabricated with a replacement gate process. This is the first successful attempt to integrate crystalline high-K dielectrics into a {"}gentle{"} damascene metal gate process in order to reduce process induced oxide damages.",

author = "Gottlob, \{H. D.B.\} and T. Echtermeyer and T. Mollenhauer and M. Schmidt and Efavi, \{J. K.\} and T. Wahlbrink and Lemme, \{M. C.\} and H. Kurz and R. Endres and Y. Stefanov and U. Schwalke and M. Czernohorsky and E. Bugiel and A. Fissel and Osten, \{H. J.\}",

year = "2006",

doi = "10.1109/ESSDER.2006.307660",

language = "English",

isbn = "1424403014",

series = "ESSDERC 2006 - Proceedings of the 36th European Solid-State Device Research Conference",

publisher = "IEEE Computer Society",

pages = "150--153",

booktitle = "ESSDERC 2006 - Proceedings of the 36th European Solid-State Device Research Conference",

note = "ESSDERC 2006 - 36th European Solid-State Device Research Conference ; Conference date: 19-09-2006 Through 21-09-2006",

}

Gottlob, HDB, Echtermeyer, T, Mollenhauer, T, Schmidt, M, Efavi, JK, Wahlbrink, T, Lemme, MC, Kurz, H, Endres, R, Stefanov, Y, Schwalke, U, Czernohorsky, M, Bugiel, E, Fissel, A & Osten, HJ 2006, Approaches to CMOS integration of epitaxial gadolinium oxide high-K dielectrics. in ESSDERC 2006 - Proceedings of the 36th European Solid-State Device Research Conference., 4099878, ESSDERC 2006 - Proceedings of the 36th European Solid-State Device Research Conference, IEEE Computer Society, pp. 150-153, ESSDERC 2006 - 36th European Solid-State Device Research Conference, Montreux, Switzerland, 19/09/06. https://doi.org/10.1109/ESSDER.2006.307660

Approaches to CMOS integration of epitaxial gadolinium oxide high-K dielectrics. / Gottlob, H. D.B.; Echtermeyer, T.; Mollenhauer, T. et al.
ESSDERC 2006 - Proceedings of the 36th European Solid-State Device Research Conference. IEEE Computer Society, 2006. p. 150-153 4099878 (ESSDERC 2006 - Proceedings of the 36th European Solid-State Device Research Conference).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - Approaches to CMOS integration of epitaxial gadolinium oxide high-K dielectrics

AU - Gottlob, H. D.B.

AU - Echtermeyer, T.

AU - Mollenhauer, T.

AU - Schmidt, M.

AU - Efavi, J. K.

AU - Wahlbrink, T.

AU - Lemme, M. C.

AU - Kurz, H.

AU - Endres, R.

AU - Stefanov, Y.

AU - Schwalke, U.

AU - Czernohorsky, M.

AU - Bugiel, E.

AU - Fissel, A.

AU - Osten, H. J.

PY - 2006

Y1 - 2006

N2 - Two process concepts for Integration of novel gate stacks with epitaxial high-K dielectrics and metal gate electrodes are presented. A "gate first" process based on a planar gate stack on ultra thin SOI material has been used for successful fabrication of MOSFETs with TiN/Gd3O 3 gate stack. Furthermore MOSFETs with W/Gd2O3 gate stack have been fabricated with a replacement gate process. This is the first successful attempt to integrate crystalline high-K dielectrics into a "gentle" damascene metal gate process in order to reduce process induced oxide damages.

AB - Two process concepts for Integration of novel gate stacks with epitaxial high-K dielectrics and metal gate electrodes are presented. A "gate first" process based on a planar gate stack on ultra thin SOI material has been used for successful fabrication of MOSFETs with TiN/Gd3O 3 gate stack. Furthermore MOSFETs with W/Gd2O3 gate stack have been fabricated with a replacement gate process. This is the first successful attempt to integrate crystalline high-K dielectrics into a "gentle" damascene metal gate process in order to reduce process induced oxide damages.

UR - https://www.scopus.com/pages/publications/84943200196

U2 - 10.1109/ESSDER.2006.307660

DO - 10.1109/ESSDER.2006.307660

M3 - Conference contribution

AN - SCOPUS:84943200196

SN - 1424403014

SN - 9781424403011

T3 - ESSDERC 2006 - Proceedings of the 36th European Solid-State Device Research Conference

SP - 150

EP - 153

BT - ESSDERC 2006 - Proceedings of the 36th European Solid-State Device Research Conference

PB - IEEE Computer Society

T2 - ESSDERC 2006 - 36th European Solid-State Device Research Conference

Y2 - 19 September 2006 through 21 September 2006

ER -

Gottlob HDB, Echtermeyer T, Mollenhauer T, Schmidt M, Efavi JK, Wahlbrink T et al. Approaches to CMOS integration of epitaxial gadolinium oxide high-K dielectrics. In ESSDERC 2006 - Proceedings of the 36th European Solid-State Device Research Conference. IEEE Computer Society. 2006. p. 150-153. 4099878. (ESSDERC 2006 - Proceedings of the 36th European Solid-State Device Research Conference). doi: 10.1109/ESSDER.2006.307660

Approaches to CMOS integration of epitaxial gadolinium oxide high-K dielectrics

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