@inproceedings{c83a0acfb6e744659c4c58e60d81b012,
title = "Approaches to CMOS integration of epitaxial gadolinium oxide high-K dielectrics",
abstract = "Two process concepts for Integration of novel gate stacks with epitaxial high-K dielectrics and metal gate electrodes are presented. A {"}gate first{"} process based on a planar gate stack on ultra thin SOI material has been used for successful fabrication of MOSFETs with TiN/Gd3O 3 gate stack. Furthermore MOSFETs with W/Gd2O3 gate stack have been fabricated with a replacement gate process. This is the first successful attempt to integrate crystalline high-K dielectrics into a {"}gentle{"} damascene metal gate process in order to reduce process induced oxide damages.",
author = "Gottlob, {H. D.B.} and T. Echtermeyer and T. Mollenhauer and M. Schmidt and Efavi, {J. K.} and T. Wahlbrink and Lemme, {M. C.} and H. Kurz and R. Endres and Y. Stefanov and U. Schwalke and M. Czernohorsky and E. Bugiel and A. Fissel and Osten, {H. J.}",
year = "2006",
doi = "10.1109/ESSDER.2006.307660",
language = "English",
isbn = "1424403014",
series = "ESSDERC 2006 - Proceedings of the 36th European Solid-State Device Research Conference",
publisher = "IEEE Computer Society",
pages = "150--153",
booktitle = "ESSDERC 2006 - Proceedings of the 36th European Solid-State Device Research Conference",
note = "ESSDERC 2006 - 36th European Solid-State Device Research Conference ; Conference date: 19-09-2006 Through 21-09-2006",
}