Approaches to CMOS integration of epitaxial gadolinium oxide high-K dielectrics

H. D.B. Gottlob, T. Echtermeyer, T. Mollenhauer, M. Schmidt, J. K. Efavi, T. Wahlbrink, M. C. Lemme, H. Kurz, R. Endres, Y. Stefanov, U. Schwalke, M. Czernohorsky, E. Bugiel, A. Fissel, H. J. Osten

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

2 Citations (Scopus)

Abstract

Two process concepts for Integration of novel gate stacks with epitaxial high-K dielectrics and metal gate electrodes are presented. A "gate first" process based on a planar gate stack on ultra thin SOI material has been used for successful fabrication of MOSFETs with TiN/Gd3O 3 gate stack. Furthermore MOSFETs with W/Gd2O3 gate stack have been fabricated with a replacement gate process. This is the first successful attempt to integrate crystalline high-K dielectrics into a "gentle" damascene metal gate process in order to reduce process induced oxide damages.

Original languageEnglish
Title of host publicationESSDERC 2006 - Proceedings of the 36th European Solid-State Device Research Conference
PublisherIEEE Computer Society
Pages150-153
Number of pages4
ISBN (Print)1424403014, 9781424403011
DOIs
Publication statusPublished - 2006
Externally publishedYes
EventESSDERC 2006 - 36th European Solid-State Device Research Conference - Montreux
Duration: 19 Sep 200621 Sep 2006

Publication series

NameESSDERC 2006 - Proceedings of the 36th European Solid-State Device Research Conference

Conference

ConferenceESSDERC 2006 - 36th European Solid-State Device Research Conference
Country/TerritorySwitzerland
CityMontreux
Period19/09/0621/09/06

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