@inproceedings{5513ec846b2d4b428a0b36e6253ae384,
title = "Aluminum-doped zinc oxide thin films for opto-electronic applications",
abstract = "Transparent conducting aluminum-doped Zinc oxide (AZO) thin films were prepared on glass substrates by rf magnetron sputtering technique using ZnO ceramic target in pure argon gas with different aluminum concentrations. The bandgap of the ZnO films slightly widens with increase in A1 content and the lowest sheet resistance of AZO films with A1 concentration of 4.25 atomic \% was obtained. The effects of post-annealing treatment on structural, electrical and optical properties of the AZO thin films were investigated. Using AZO film with 4.2 at. \% Al as the transparent electrode, a titanium dioxide based dye-sensitized solar cell was constructed and a solar to electrical energy conversion efficiency of 2.9 \% was achieved under AM 1.5 solar simulated sunlight.",
author = "N. Hirahara and B. Onwona-Agyeman and M. Nakao",
year = "2010",
doi = "10.1149/1.3377094",
language = "English",
isbn = "9781566777940",
series = "ECS Transactions",
publisher = "Electrochemical Society Inc.",
number = "4",
pages = "13--19",
booktitle = "Wide-Bandgap Semiconductor Materials and Devices 11 -and- State-of-the-Art Program on Compound Semiconductors 52, SOTAPOCS 52",
edition = "4",
}