0.86-nm CET gate stacks with epitaxial Gd2O3 high-κ dielectrics and FUSI NiSi metal electrodes

H. D.B. Gottlob, T. Echtermeyer, M. Schmidt, T. Mollenhauer, J. K. Efavi, T. Wahlbrink, M. C. Lemme, M. Czernohorsky, E. Bugiel, A. Fissel, H. J. Osten, H. Kurz

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