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Dive into the research topics of '0.86-nm CET gate stacks with epitaxial Gd2O3 high-κ dielectrics and FUSI NiSi metal electrodes'. Together they form a unique fingerprint.- Sort by
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H. D.B. Gottlob, T. Echtermeyer, M. Schmidt, T. Mollenhauer, J. K. Efavi, T. Wahlbrink, M. C. Lemme, M. Czernohorsky, E. Bugiel, A. Fissel, H. J. Osten, H. Kurz
Research output: Contribution to journal › Article › peer-review