0.86-nm CET gate stacks with epitaxial Gd2O3 high-κ dielectrics and FUSI NiSi metal electrodes

H. D.B. Gottlob; T. Echtermeyer; M. Schmidt; T. Mollenhauer; J. K. Efavi; T. Wahlbrink; M. C. Lemme; M. Czernohorsky; E. Bugiel; A. Fissel; H. J. Osten; H. Kurz

doi:10.1109/LED.2006.882581

0.86-nm CET gate stacks with epitaxial Gd₂O₃ high-κ dielectrics and FUSI NiSi metal electrodes

H. D.B. Gottlob, T. Echtermeyer, M. Schmidt, T. Mollenhauer, J. K. Efavi, T. Wahlbrink, M. C. Lemme, M. Czernohorsky, E. Bugiel, A. Fissel, H. J. Osten, H. Kurz

Research output: Contribution to journal › Article › peer-review

50 Citations (Scopus)

Abstract

In this letter, ultrathin gadolinium oxide (Gd₂O₃) high-κ gate dielectrics with complementary-metal-oxide- semiconductor (CMOS)-compatible fully silicided nickel-silicide metal gate electrodes are reported for the first time. MOS capacitors with a Gd₂O₃ thickness of 3.1 nm yield a capacitance equivalent oxide thickness of CET = 0.86 nm. The extracted dielectric constant is κ = 13-14. Leakage currents and equivalent oxide thicknesses of this novel gate stack meet the International Technology Roadmap for Semiconductors targets for the near term schedule and beyond.

Original language	English
Pages (from-to)	814-816
Number of pages	3
Journal	IEEE Electron Device Letters
Volume	27
Issue number	10
DOIs	https://doi.org/10.1109/LED.2006.882581
Publication status	Published - 2006
Externally published	Yes

Keywords

Epitaxial dielectric
Fully silicided (FUSI)
GdO
High-k
Metal gate
NiSi
Rare earth oxide

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10.1109/LED.2006.882581

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title = "0.86-nm CET gate stacks with epitaxial Gd2O3 high-κ dielectrics and FUSI NiSi metal electrodes",

abstract = "In this letter, ultrathin gadolinium oxide (Gd2O3) high-κ gate dielectrics with complementary-metal-oxide- semiconductor (CMOS)-compatible fully silicided nickel-silicide metal gate electrodes are reported for the first time. MOS capacitors with a Gd2O3 thickness of 3.1 nm yield a capacitance equivalent oxide thickness of CET = 0.86 nm. The extracted dielectric constant is κ = 13-14. Leakage currents and equivalent oxide thicknesses of this novel gate stack meet the International Technology Roadmap for Semiconductors targets for the near term schedule and beyond.",

keywords = "Epitaxial dielectric, Fully silicided (FUSI), GdO, High-k, Metal gate, NiSi, Rare earth oxide",

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doi = "10.1109/LED.2006.882581",

language = "English",

volume = "27",

pages = "814--816",

journal = "IEEE Electron Device Letters",

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T1 - 0.86-nm CET gate stacks with epitaxial Gd2O3 high-κ dielectrics and FUSI NiSi metal electrodes

AU - Gottlob, H. D.B.

AU - Echtermeyer, T.

AU - Schmidt, M.

AU - Mollenhauer, T.

AU - Efavi, J. K.

AU - Wahlbrink, T.

AU - Lemme, M. C.

AU - Czernohorsky, M.

AU - Bugiel, E.

AU - Fissel, A.

AU - Osten, H. J.

AU - Kurz, H.

PY - 2006

Y1 - 2006

N2 - In this letter, ultrathin gadolinium oxide (Gd2O3) high-κ gate dielectrics with complementary-metal-oxide- semiconductor (CMOS)-compatible fully silicided nickel-silicide metal gate electrodes are reported for the first time. MOS capacitors with a Gd2O3 thickness of 3.1 nm yield a capacitance equivalent oxide thickness of CET = 0.86 nm. The extracted dielectric constant is κ = 13-14. Leakage currents and equivalent oxide thicknesses of this novel gate stack meet the International Technology Roadmap for Semiconductors targets for the near term schedule and beyond.

AB - In this letter, ultrathin gadolinium oxide (Gd2O3) high-κ gate dielectrics with complementary-metal-oxide- semiconductor (CMOS)-compatible fully silicided nickel-silicide metal gate electrodes are reported for the first time. MOS capacitors with a Gd2O3 thickness of 3.1 nm yield a capacitance equivalent oxide thickness of CET = 0.86 nm. The extracted dielectric constant is κ = 13-14. Leakage currents and equivalent oxide thicknesses of this novel gate stack meet the International Technology Roadmap for Semiconductors targets for the near term schedule and beyond.

KW - Epitaxial dielectric

KW - Fully silicided (FUSI)

KW - GdO

KW - High-k

KW - Metal gate

KW - NiSi

KW - Rare earth oxide

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U2 - 10.1109/LED.2006.882581

DO - 10.1109/LED.2006.882581

M3 - Article

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SN - 0741-3106

VL - 27

SP - 814

EP - 816

JO - IEEE Electron Device Letters

JF - IEEE Electron Device Letters

IS - 10

ER -

0.86-nm CET gate stacks with epitaxial Gd₂O₃ high-κ dielectrics and FUSI NiSi metal electrodes

Abstract

Keywords

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